Datasheet Details
| Part number | AO4752 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.12 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4752-AlphaOmegaSemiconductors.pdf |
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Overview: AO4752 30V N-Channel AlphaMOS General.
| Part number | AO4752 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.12 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4752-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 15A < 8.8mΩ < 15.5mΩ Top View D D D D SOIC-8 Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.05mH C ID IDM IAS EAS VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±20 15 12 102 22 12 36 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev 0: April 2012 www.aosmd.com Page 1 of 6 AO4752 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 0.5 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 2 2.5 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=15A TJ=125°C 7.2 8.8 10.2 12.5 mΩ VGS=4.5V, ID=10A 12.3 15.5 mΩ gFS Forward Transconductance VDS=5V, ID=15A 71 S VSD Diode Forward Voltage IS=0.2A,VGS=0V 0.45 0.65 V IS Maximum Body-Diode Continuo
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