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AO6403 - 30V P-Channel MOSFET

General Description

The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6403 30V P-Channel MOSFET General Description Product Summary The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) -30V -6A < 35mW < 58mW TSOP6 Top View Bottom View D Top View Pin1 D1 D2 G3 6D 5 D 4S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6 -5 -30 2 1.