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AO6414 - N-Channel MOSFET

Datasheet Summary

Description

The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It offers operation over a wide gate drive range from 2.5V to 12V.

This device is suitable for use as a load switch.

Features

  • VDS (V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 4.5V) RDS(ON) < 200m Ω (VGS = 2.5V) TSOP-6 Top View www. DataSheet4U. com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B Maximum 55 ±12 2.3 1.9 9 1.56 1.1 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25°C Power Dissipation TA=70°C Junction and Storage Tempera.

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Datasheet Details

Part number AO6414
Manufacturer Alpha & Omega Semiconductors
File Size 161.50 KB
Description N-Channel MOSFET
Datasheet download datasheet AO6414 Datasheet
Additional preview pages of the AO6414 datasheet.

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Full PDF Text Transcription

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AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 specifications). AO6414L is a Green Product ordering option. AO6414 and AO6414L are electrically identical. Features VDS (V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 4.5V) RDS(ON) < 200m Ω (VGS = 2.5V) TSOP-6 Top View www.DataSheet4U.
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