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AO6419 - P-Channel MOSFET

Datasheet Summary

Description

The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View www. DataSheet4U. com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

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Datasheet Details

Part number AO6419
Manufacturer Alpha & Omega Semiconductors
File Size 138.34 KB
Description P-Channel MOSFET
Datasheet download datasheet AO6419 Datasheet
Additional preview pages of the AO6419 datasheet.

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Full PDF Text Transcription

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AO6419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View www.DataSheet4U.
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