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AO6601 - MOSFET

Datasheet Summary

Description

The AO6601 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Diss.

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Datasheet Details

Part number AO6601
Manufacturer Alpha & Omega Semiconductors
File Size 240.23 KB
Description MOSFET
Datasheet download datasheet AO6601 Datasheet
Additional preview pages of the AO6601 datasheet.

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Full PDF Text Transcription

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AO6601 Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.
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