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AO6602 - 30V Complementary MOSFET

Datasheet Summary

Description

The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

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Datasheet Details

Part number AO6602
Manufacturer Alpha & Omega Semiconductors
File Size 318.43 KB
Description 30V Complementary MOSFET
Datasheet download datasheet AO6602 Datasheet
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AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V ID= 3.5A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 70mΩ (VGS=4.5V) P-Channel -30V -2.7A (VGS=-10V) RDS(ON) < 100mΩ (VGS=-10V) < 170mΩ (VGS=-4.5V) Top View TSOP6 Bottom View Top View D1 D2 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C 3.
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