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AO6604L - MOSFET

Download the AO6604L datasheet PDF. This datasheet also covers the AO6604 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO6604 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6604L( Green Product ) is offered in a lead-free package.

Key Features

  • n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.73 -55 to 150.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO6604_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev 2: Nov 2004 AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect Transistor General Description The AO6604 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package. Features n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.