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AO6604L - MOSFET

This page provides the datasheet information for the AO6604L, a member of the AO6604 MOSFET family.

Datasheet Summary

Description

The AO6604 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6604L( Green Product ) is offered in a lead-free package.

Features

  • n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.73 -55 to 150.

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Datasheet preview – AO6604L

Datasheet Details

Part number AO6604L
Manufacturer Alpha & Omega Semiconductors
File Size 764.20 KB
Description MOSFET
Datasheet download datasheet AO6604L Datasheet
Additional preview pages of the AO6604L datasheet.

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Full PDF Text Transcription

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Rev 2: Nov 2004 AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect Transistor General Description The AO6604 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package. Features n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.
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