Datasheet4U Logo Datasheet4U.com

AO6605 - MOSFET

Datasheet Summary

Description

The AO6605 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -20V VDS (V) = 20V ID = 1.9A (VGS = 4.5V) -2.5A RDS(ON) < 200m Ω < 97mΩ (VGS = 4.5V) < 270m Ω < 130mΩ (VGS = 2.5V) < 400m Ω < 190mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.

📥 Download Datasheet

Datasheet preview – AO6605

Datasheet Details

Part number AO6605
Manufacturer Alpha & Omega Semiconductors
File Size 219.07 KB
Description MOSFET
Datasheet download datasheet AO6605 Datasheet
Additional preview pages of the AO6605 datasheet.
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO6605 Complementary Enhancement Mode Field Effect Transistor General Description The AO6605 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications). AO6605L is a Green Product ordering option. AO6605 and AO6605L are electrically identical. Features n-channel p-channel -20V VDS (V) = 20V ID = 1.9A (VGS = 4.5V) -2.5A RDS(ON) < 200m Ω < 97mΩ (VGS = 4.5V) < 270m Ω < 130mΩ (VGS = 2.5V) < 400m Ω < 190mΩ (VGS = 1.
Published: |