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AO6603 - MOSFET

Datasheet Summary

Description

The AO6603 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current Power Dissipat.

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Datasheet Details

Part number AO6603
Manufacturer Alpha & Omega Semiconductors
File Size 315.24 KB
Description MOSFET
Datasheet download datasheet AO6603 Datasheet
Additional preview pages of the AO6603 datasheet.

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Full PDF Text Transcription

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AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical. Features n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.
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