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AO6603 - MOSFET

General Description

The AO6603 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current Power Dissipat.

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO6601 MOSFET
AO6602 30V Complementary MOSFET
AO6604 20V Complementary MOSFET
AO6604L MOSFET
AO6605 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical. Features n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.