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AO6701 - P-Channel MOSFET

Datasheet Summary

Description

The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is www.DataSheet4U.com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Features

  • VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V).

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Datasheet preview – AO6701

Datasheet Details

Part number AO6701
Manufacturer Alpha & Omega Semiconductors
File Size 195.50 KB
Description P-Channel MOSFET
Datasheet download datasheet AO6701 Datasheet
Additional preview pages of the AO6701 datasheet.

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Full PDF Text Transcription

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AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is www.DataSheet4U.com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS & Sony 259 specifications). AO6701L is a Green Product ordering option. AO6701 and AO6701L are electrically identical. Features VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.
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