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AO6706 - N-Channel MOSFET

Datasheet Summary

Description

The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is www.DataSheet4U.com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Features

  • VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V).

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Datasheet preview – AO6706

Datasheet Details

Part number AO6706
Manufacturer Alpha & Omega Semiconductors
File Size 138.45 KB
Description N-Channel MOSFET
Datasheet download datasheet AO6706 Datasheet
Additional preview pages of the AO6706 datasheet.

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Full PDF Text Transcription

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AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is www.DataSheet4U.com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS & Sony 259 specifications). AO6706L is a Green Product ordering option. AO6706 and AO6706L are electrically identical. Features VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.
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