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AO6702 - N-Channel MOSFET

Datasheet Summary

Description

The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional www.DataSheet4U.com blocking switch, or for DC-DC conversion applications.

Features

  • VDS (V) = 20V ID = 3.8A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V).

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Datasheet Details

Part number AO6702
Manufacturer Alpha & Omega Semiconductors
File Size 150.69 KB
Description N-Channel MOSFET
Datasheet download datasheet AO6702 Datasheet
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Full PDF Text Transcription

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AO6702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional www.DataSheet4U.com blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS & Sony 259 specifications). AO6702L is a Green Product ordering option. AO6702 and AO6702L are electrically identical. Features VDS (V) = 20V ID = 3.8A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.
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