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AO8701 - P-Channel Enhancement Mode Field Effect Transistor

Description

The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.

AO8701L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V).

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www.DataSheet4U.com Rev 1: Oct 2004 AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
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