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AO8701L - P-Channel Enhancement Mode Field Effect Transistor

Download the AO8701L datasheet PDF. This datasheet also covers the AO8701 variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.

AO8701L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO8701_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO8701 P-Channel Enhancement Mode Field Effect Transistor
AO8403 P-Channel Enhancement Mode Field Effect Transistor
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A 20V P-Channel MOSFET
AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Rev 1: Oct 2004 AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
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