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AO8846 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

It is ESD protected.

This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.

Key Features

  • VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ D1 D2 G2 1.8KΩ S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Steady State 20 ±8 5.7 4.

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www.DataSheet4U.com AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ D1 D2 G2 1.