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AOTL080A60 - 600V N-Channel Power Transistor

General Description

Product Summary Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery RoHS 2.0 and Halogen-Free Compliant VDS @ Tj,max IDM RDS(ON),max Qg,t

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AOTL080A60 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters. 100% UIS Tested 100% Rg Tested Top View TOLLB Bottom View 700V 184A < 0.08Ω 70nC 9.