Datasheet Details
| Part number | AOTL080A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 383.79 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOTL080A60-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOTL080A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOTL080A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 383.79 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOTL080A60-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters.
100% UIS Tested 100% Rg Tested Top View TOLLB Bottom View 700V 184A < 0.08Ω 70nC 9.1mJ D PIN1(G) Orderable Part Number AOTL080A60 S K PIN1(G) Package Type TOLLB Form Tape &Reel G K S Minimum Order Quantity 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness VDS VGS ID IDM IDSM IAR EAR EAS dv/dt Diode reverse recovery dv/dt VDS=0 to 400V,IF<=37A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 46 30 184 6.3 5 11 60 690 100 20 1000 480 3.8 8.3 5.3 -55 to 150 300 Units V V A A A mJ mJ V/ns V/ns A/us W W/°C W °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Case Symbol RqJA RqJC Typical 10 40 0.22 Maximum 15 50 0.26 Units °C/W °C/W °C/W Rev.1.0: February 2025 www.aosmd.com Page 1 of 6 AOTL080A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Volta
| Part Number | Description |
|---|---|
| AOTL022V65X2 | 650V Silicon Carbide Power MOSFET |
| AOTL095A60 | N-Channel Power Transistor |
| AOTL125A60 | 600V TOLL |
| AOTL130A60FD | N-Channel Power Transistor |
| AOTL42A60E | N-Channel Power Transistor |
| AOTL66401 | 40V N-Channel MOSFET |
| AOTL66515 | 150V N-Channel MOSFET |
| AOTL66518 | 150V N-Channel MOSFET |
| AOTL66518Q | 150V N-Channel MOSFET |
| AOTL66608 | 60V N-Channel MOSFET |