Datasheet Details
| Part number | AOTL77908 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 388.68 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOTL77908 Datasheet
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| Part number | AOTL77908 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 388.68 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOTL77908 Datasheet
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• AlphaSGT™ 100V, N-Channel Power MOSFET • Low RDS(ON) • Tjmax = 175°C • PB-free lead plating • RoHS 2.0 compliant • Halogen free • MSL 1 classified Applications • Motor Drive • Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 326A < 1.7mΩ TOLLC Top View Bottom View D D PIN1 G G S S Orderable Part Number AOTL77908 Package Type TOLLC Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 326 230 1304 54 45 100 500 375 188 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 35 Maximum Junction-to-Case Steady-State RqJC 0.3 Max 15 45 0.4 Units °C/W °C/W °C/W Rev1.1: January 2025 www.aosmd.com Page 1 of 6 AOTL77908 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VD
AOTL77908 100V N-Channel AlphaSGT TM General.
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