HM3N90F - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N90F
Manufacturer	H&M Semiconductor
File Size	537.13 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N90F Datasheet
Additional preview pages of the HM3N90F datasheet.

Product details

Description

VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.7 enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |