Datasheet4U Logo Datasheet4U.com

HM3N90F - Silicon N-Channel Power MOSFET

Description

enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM3-6514-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514B-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514S-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-65764 High Speed CMOS SRAM Matra Design Semiconductor
HM3-65787 High Speed CMOS SRAM Matra Design Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM3N90I Silicon N-Channel Power MOSFET
HM3N10 N-Channel Enhancement Mode Power MOSFET
HM3N10AMR N-Channel Enhancement Mode Power MOSFET
HM3N10MR N-Channel Enhancement Mode Power MOSFET
HM3N10PR N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM3N90F Silicon N-Channel Power MOSFET General Description： VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.7 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.
Published: |