Datasheet4U Logo Datasheet4U.com

IRG4PC50UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package.
  • Lead-Free C G E n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50F Fast Speed IGBT IRF
IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4PC50UDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50F-EPBF Fast Speed IGBT
IRG4PC50FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF Fast Speed IGBT
IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -95186 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50UPbF UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's VCES = 600V VCE(on) typ. = 1.