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IRG4PC50UPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD -95186 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50UPbF UltraFast Speed.

IRG4PC50UPBF datasheet preview

Datasheet Details

Part number	IRG4PC50UPBF
Manufacturer	International Rectifier (now Infineon)
File Size	631.53 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC50UPBF-InternationalRectifier.pdf

Key Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package.
Lead-Free C G E n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

IRG4PC50U from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PC50U	INSULATED GATE BIPOLAR TRANSISTOR	IRF
	IRG4PC50UD	INSULATED GATE BIPOLAR TRANSISTOR	IRF
	IRG4PC50F	Fast Speed IGBT	IRF
	IRG4PC50FD	INSULATED GATE BIPOLAR TRANSISTOR	IRF
	IRG4PC50KD	INSULATED GATE BIPOLAR TRANSISTOR	IRF

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4PC50UDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50F-EPBF	Fast Speed IGBT
IRG4PC50FDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF	Fast Speed IGBT
IRG4PC50K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50KDPBF	UltraFast IGBT
IRG4PC50KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50SDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50WPBF	INSULATED GATE BIPOLAR TRANSISTOR

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