BLV25 Description
N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m.
BLV25 Key Features
- internally matched input for wideband operation and high power gain
- multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile
- gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap.