FDMA1023PZ
Overview
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses.
- Max RDS(on) = 72 mW at VGS = -4.5 V, ID = -3.7 A
- Max RDS(on) = 95 mW at VGS = -2.5 V, ID = -3.2 A
- Max RDS(on) = 130 mW at VGS = -1.8 V, ID = -2.0 A
- Max RDS(on) = 195 mW at VGS = -1.5 V, ID = -1.0 A
- Low Profile - 0.8 mm Maximum - In the New Package MicroFET 2x2 mm
- HBM ESD Protection Level > 2 kV (Note 3)
- Free from Halogenated Compounds and Antimony Oxides
- This Device is Pb-Free, Halide Free and is RoHS Compliant
