FDMA1024NZ
Overview
This is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.
- Max rDS(on) = 54 mW at VGS = 4.5 V, ID = 5.0 A
- Max rDS(on) = 66 mW at VGS = 2.5 V, ID = 4.2 A
- Max rDS(on) = 82 mW at VGS = 1.8 V, ID = 2.3 A
- Max rDS(on) = 114 mW at VGS = 1.5 V, ID = 2.0 A
- HBM ESD Protection Level = 1.6 kV (Note 3)
- Low Profile - 0.8 mm Maximum in the New Package MicroFETt 2 x 2 mm
- Free from Halogenated Compounds and Antimony Oxides
- This Device is Pb-Free and is RoHS Compliant
