| Part number | 2SA1160 |
|---|---|
| Datasheet | 2SA1160_ToshibaSemiconductor.pdf |
| File Size | 151.12 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1160 | Plastic-Encapsulated Transistors | TRANSYS Electronics Limited |
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2SA1160 | PNP Transistor | JCET |
| Part Number | Description |
|---|---|
| 2SA1162 | Silicon PNP Transistor |
| 2SA1163 | Silicon PNP Transistor |
| 2SA1145 | TRANSISTOR |
| 2SA1150 | TRANSISTOR |
| 2SA1182 | Silicon PNP Transistor |
| 2SA1012 | TRANSISITOR |
| 2SA1013 | Silicon PNP Transistor |
| 2SA1015 | Silicon NPN TRANSISTOR |
| 2SA1015L | Silicon NPN TRANSISTOR |
| 2SA1020 | PNP Transistor |
