2SA1160
Key Features
- High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
- Low saturation voltage
- Part: 2SA1160
- Description: Silicon PNP Epitaxial Type Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 151.12 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SA1160 | JCET | PNP Transistor |
| 2SA1160 | TRANSYS Electronics Limited | Plastic-Encapsulated Transistors |
| 2SA1162 | Galaxy Microelectronics | Silicon Epitaxial Planar Transistor |
| 2SA1166 | SavantIC | SILICON POWER TRANSISTOR |
| 2SA1169 | Inchange Semiconductor | POWER TRANSISTOR |
| 2SA1166 | Inchange Semiconductor | POWER TRANSISTOR |
| 2SA1162 | Kexin Semiconductor | Silicon PNP Transistor |
| 2SA1162 | SeCoS Halbleitertechnologie GmbH | PNP Silicon Transistor |
| 2SA1163 | Kexin Semiconductor | Silicon PNP Transistor |
| 2SA1162 | WEJ | PNP EPITAXIAL SILICON TRANSISTOR |