SONGLONG LISHANG VDR Varistor 32D SERIES Produc.
JRC5532DD - Low Noise Dual Operational Amplifier
NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared .K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c.BG12232D1 - Display
www.DataSheet4U.com BO LYMIN BG12232D1 Feature 1. COB with metal frame 2. built-in oscillation 3. Built-in controller SED1520Doa 4. 1/32 duty cycle .POWER-22D - (POWER-12D/-22D/-32D) Low power off-line switching power supply control chip
POWER-12D/22D/32D ►POWER 6~30W VCD/DVD ►POWER ► ► AC (180~265Vac) (85~265Vac) DIP-8 POWER-12D POWER-22D POWER-32D DIP-8 1 .GNR32D271K - VARISTORS
VARISTORS Catalog number system G N R 2 0 D 2 0 1 K * * * Product Series GNR: Element Size 05 :ψ5mm Type D: Disk S: Square B: Block Nomi.JRC5532D - Low Noise Dual Operational Amplifier
NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared .K4S511632D - 512Mb D-die SDRAM
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS compliant) INFORMATION IN THIS DO.AMG12232D - LCD
145 Royal Crest Court Unit 42 Markham, ON, Canada L3R 9Z4 Tel: 905-477-1166 Fax: 905-477-1782 http://www.orientdisplay.com SPECIFICATIONS FOR LCD MODU.MUN5232DW1T1 - Dual Bias Resistor Transistors
LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Re.R1232D121B - PWM STEP-DOWN DC/DC CONVERTER
R1232D SERIES PWM STEP-DOWN DC/DC CONVERTER WITH SYNCHRONOUS RECTIFIER NO.EA-129-130510 OUTLINE The R1232D Series are CMOS-based PWM step-down DC/DC c.DTV32D - CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE
® DTVseries (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM VF 5 A to 10 A 1500 V 1.3 V to 1.5 V A .K4S281632D-L1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch.K4S281632D-L55 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch.K4S281632D-NC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch.DMN32D4SDW - N-CHANNEL MOSFET
NEW PRODUCT ADVAANDCVEADN ICNEFIONRFOMRATMIAOTNION DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 0.4Ω.GU128X32D-7903 - VFD Module
RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X32D-7903 Specification No: Date Of Issue: Revision: DS-1384-0001-00 Oct.