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STR-W6754 Quasi-Resonant Topology Primary Switching Regulators Features and Benefits ▪ Quasi-resonant topology IC  Low EMI noise and soft switching

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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（） SAM Semiconductor Devices CO.,LTD TEL: 86-755-29161458 FAX: 86-755-29161436 Http://www.sam-elec.cn http://deltasic.cn.1688.com E-Mail: deltasic

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Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a cha

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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NEOFIDELITY NTP8910A High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Preliminary ver. 0.1 NEOFIDELITY,

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GOFORD G03N10 Features • High Density Cell Design for Ultra Low RDS(on) • Special Process Technology for High ESD Capability • Excellent Package for

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Features ◆ Low Profile: Typical height of 1.4mm ◆ Ideal for automated placement ◆ High surge current capability ◆ Solder Dip 260℃，10seconds Mechanical

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KP3310 Offline Inductor-less AC Linear Regulator FEATURES  High Output Voltage Accuracy: 2%  Programmable Output: 5V/3.3V/2.7V  Smart Control to

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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GT1081 10 Woofer – Technical Data SPECIFICATIONS DIAMETER: SENSITIVITY (2.83 V @ 1 M): POWER HANDLING: FREQUENCY RESPONSE: NOMINAL IMPEDANCE: VOICE-C

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Model B0430J50100A00 Rev E Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The B0430J50100A00 is a low cost, low profile sub-miniature

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a cha

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NCP1000, NCP1001, NCP1002 Integrated Off- Line Switching Regulator The NCP1000 through NCP1002 series of integrated switching regulators, combine a f

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Nov. 2007 Ultra-Fast Soft Recovery Diode Module Description Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency pow

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ME8105 PWM Controller of High-performance Current Mode ME8105 General Description PWM controller of high-performance current mode is specially design

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