1.0V Datasheet | Specifications & PDF Download

LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode June 2005 LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode General Description The LM136-5.0/

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SF08E60D1 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free Voltage 600V 8 Amp Super Fast Rectifier FEATURES

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2.5V/ 5.0V Reference Diode LM336 FEATURES • Wide Operating Current of 400μA to 10mA for 2.5V • Wide Operating Current of 600μA to 10mA for 5.0V • Gu

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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2.0-7.0V 1.8A H SA8301 。/ // SA8301， ， ，， 、 。 SA8301 ⚫ 2.0-7.0V ⚫ 1.8A,2.5A ⚫ (typ.0.1uA) ⚫ （typ.60uA） ⚫ ; ⚫ SOP8 ⚫ 2-4 ⚫ 2-4/ ⚫ 1 SA8301

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

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600V High and Low Side Driver SLM2110 PRODUCT SUMMARY • VOFFSET • IO+/• VOUT • ton/off (typ.) • Delay Matching (typ.) 600 V max. 1 A / 1.6 A 10 V -

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® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V  +180V  +1.0A/-1.0A  3.3V/5V  VCC（UVLO）     100ns DC

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B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce

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S1NBC80-7062 Bridge Diodes 800V, 1.5A Feature ・Small SMD (There is also DIP) ・High IFSM ・Pin-distance 3.4mm for isolation ・Pb free terminal ・RoHS:Yes

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OC5820 MOSFET 。OC5820 6-40V 2.5 A ， 。 OC5820 PWM ， 。 OC5820 FS ， 。 OC5820 。 OC5820 ESOP8 ， 。 OC5820 2.5A，40V  2.5A  40V/3A MOSFET  93

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RJK0822SPN-VB RJK0822SPN-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V

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DSTD5200 Pin out 2 Base Cathode Schottky Barrier Rectifier DSTD5200, 5A, 200V, TO-252 (single die) RoHS Pb Description Littelfuse DST series Ultra L

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