1.9A Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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General Purpose Relays Power Relays Potter & Brumfield T9A Series, DC Coil 30A PCB or Panel Mount Relay n 30A switching in 1 form A (NO) and 20A in

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Transient Voltage Suppressors (TVS) Data Sheet 1.5SMC SERIES Features ■ 1500W peak pulse power capability at 10/1000μs waveform, repetition rate (du

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733-11-I Wuxi I-CORE Electronics Co., Ltd. ：AIP1629A-AX-BJ-113 AIP1629A LED ： 2011-12-A1 2011-12 / 100 9 2 http://www.i-core. cn

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KP1059AWPA 、、  500V MOSFET  600V  800V   、 VDD   ±4%     :  LED     HVDD  ASOP-7  LED KP1059AWP LED。 KP10

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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XB8089A ______________________________________ ________________________________________________________________________________ One Cell Lithium-ion/P

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INTEGRATED CIRCUITS DATA SHEET TDA1519A 22 W BTL or 2 x 11 W stereo car radio power amplifier Product specification File under Integrated Circuits, I

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High Performance CCFL Controller DF6109A —DF6109A （V1.0） z DF6109A ZVS （Zero Voltage Switch） LCD IC，，， 、、；， 、、LCD 、，、 。 z ‹ IC ：4.5V----18V ‹

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LOW VOLTAGE DETECTOR R×5VT SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO.EA-026-9803 NOTICE 1. The products and the product specificatio

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1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s Tough CMOS™ Construction High Peak Output Current 9A

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3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ =

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Preliminary Datasheet RJP4009ANS Nch IGBT for Strobe Flash Features • • • • • • Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70°

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www.dycmcu.com N79A8211 AD8FLASH N79A8211 Rev. 1.62 810bit-A/D8FLASH . N79A8211-D20R N79A8211-S20R N79A8211-D16R N79A8211-D08R N79A8211-D20 N79A82

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.)

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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