110N2-VB 110N2-VB Datasheet N-Channel 20-V (D-S)1.
IXYS
8
IXTX110N20L2 - Power MOSFET
Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTK110N20L2 IXTX110N20L2 VDSS ID25 RDS(on) = 200V = 110A < 24mΩ N-Channel.
IXYS
6
IXTK110N20L2 - Power MOSFET
Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTK110N20L2 IXTX110N20L2 VDSS ID25 RDS(on) = 200V = 110A < 24mΩ N-Channel.
VBsemi
6
110N2 - N-Channel MOSFET
110N2-VB 110N2-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 4.5 V 20 0.006 @.
INCHANGE
4
IPP110N20N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switchin.
Infineon
3
IPP110N20NA - Power-Transistor
IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on.
Infineon Technologies
3
IPP110N20N3G - Power Transistor
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .
INCHANGE
3
IPB110N20N3LF - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB110N20N3LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.
INCHANGE
3
IXTX110N20L2 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTX110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High spee.
IXYS Corporation
2
IXFV110N25TS - Trench Gate Power HiperFET
Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) .
Infineon Technologies
2
IPI110N20N3G - Power Transistor
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .
INCHANGE
2
IXTK110N20L2 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High spee.
Infineon
2
IPI110N20N3 - Power-Transistor
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
Infineon
2
IPP110N20N3 - Power-Transistor
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
INCHANGE
2
IPP110N20NA - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switchin.
INCHANGE
2
IPI110N20N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
Supertex Inc
1
VP1110N2 - P-Channel Enhancement-Mode Vertical DMOS Power FETs
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U DataSheet4U.com .
IXYS Corporation
1
IXFV110N25T - Trench Gate Power HiperFET
Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) .
IXYS Corporation
1
IXFH110N25T - TrenchHV Power MOSFET HiPerFET
TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR .
Infineon
1
IPB110N20N3LF - MOSFET
IPB110N20N3LF MOSFET OptiMOSTM3LinearFET,200V Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •Widesaf.