128Kx Datasheet | Specifications & PDF Download

MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast ac

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White Electronic Designs EDI88128C 128Kx8 MONOLITHIC SRAM, SMD 5962-89598 FEATURES „ Access Times of 70, 85, 100ns „ Available with Single Chip Sel

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www.DataSheet4U.com MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • 5.0V±10% for read, erase and write operation 131072x16/262

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www.DataSheet4U.com MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • 5.0V±10% for read, erase and write operation 131072x16

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MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast ac

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www.DataSheet4U.com MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • 5.0V±10% for read, erase and write operation 131072x16

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1 Megabit High Speed CMOS SRAM DPS128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolu

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www.DataSheet4U.com MX27L1000 FEATURES 1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM • Operating current: 20mA @3.6V, 5MHz • Standby current: 10u

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www.DataSheet4U.com MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • 5.0V±10% for read, erase and write operation 131072x16/262

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www.DataSheet4U.com EDI9LC644V 128Kx32 SSRAM/1Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP FEATURES DESCRIPTION n Clock

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April 2005 ® AS7C33128NTD18B 3.3V 128K×18 Pipelined SRAM with NTDTM Features • Organization: 131,072 words × 18 bits • NTD™ architecture for efficie

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K7N403601B K7N401801B www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision Histo

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K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revised - Deleted 32

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February 2005 ® AS7C33128NTD32B AS7C33128NTD36B 3.3V 128K×32/36 Pipelined SRAM with NTDTM Features • Organization: 131,072 words × 32 or 36 bits • N

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SSSS7777AAAA444400001331866833330000MMMM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 4Mb Sync. Pipelined

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EDI88130CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES s Access Times of 15*, 17, 20, 25, 35, 45, 55ns s Battery Back-up O

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4 Megabit High Speed CMOS SRAM DPS128X32CV3/DPS128X32BV3 DESCRIPTION: The DPS128X32CV3/DPS128X32BV3 ‘’VERSA-STACK’’ module is a revolutionary new high

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KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0

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White Electronic Designs EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES „ Access Times of 15*, 17, 20, 25, 35, 45, 55ns „ CS# and OE# F

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www.DataSheet4U.com CY7C4282V CY7C4292V 64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion Features • 3.3V operation for low pow

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