K6R1008C1C-C10 (Samsung semiconductor)
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri
(16 views)
K6X1008C2D (Samsung semiconductor)
128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised - Deleted 32
(13 views)
K6R1008C1C-I12 (Samsung semiconductor)
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri
(10 views)
AS7C33128NTD36B (Alliance Semiconductor Corporation)
(AS7C33128NTD32B / AS7C33128NTD36B) 3.3V 128Kx32/36 Pipelined SRAM
February 2005
®
AS7C33128NTD32B AS7C33128NTD36B
3.3V 128K×32/36 Pipelined SRAM with NTDTM
Features
• Organization: 131,072 words × 32 or 36 bits • N
(9 views)
MX29F200CT (Macronix International)
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
www.DataSheet4U.com
MX29F200C T/B
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
FEATURES
• • • • • 5.0V±10% for read, erase and write operation 131072x16
(9 views)
K6R1008C1A-C12 (Samsung semiconductor)
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and In
(8 views)
K6R1008C1C-I10 (Samsung semiconductor)
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri
(8 views)
AS7C33128NTD32B (Alliance Semiconductor Corporation)
(AS7C33128NTD32B / AS7C33128NTD36B) 3.3V 128Kx32/36 Pipelined SRAM
February 2005
®
AS7C33128NTD32B AS7C33128NTD36B
3.3V 128K×32/36 Pipelined SRAM with NTDTM
Features
• Organization: 131,072 words × 32 or 36 bits • N
(8 views)
K7N401801A (Samsung semiconductor)
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601A K7N401801A
www.DataSheet4U.com
128Kx36 & 256Kx18 Pipelined NtRAMTM
Document Title
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revision Hist
(8 views)
WMF128K8-xxx5 (White Electronic Designs Corporation)
128Kx8 MONOLITHIC FLASH
White Electronic Designs
www.DataSheet4U.com
WMF128K8-XXX5
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
FEATURES
Access Times of 50*, 60, 70, 90, 120, 15
(8 views)
MX29F200B (Macronix International)
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
www.DataSheet4U.com
MX29F200T/B
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
FEATURES
• • • • 5.0V±10% for read, erase and write operation 131072x16/262
(8 views)
HT27C010 (Holtek Semiconductor Inc)
OTP CMOS 128Kx 8-Bit EPROM
HT27C010 CMOS 128K´8-Bit OTP EPROM
Features
· Operating voltage: +5.0V · Programming voltage - VPP=12.5V±0.2V - VCC=6.0V±0.2V · 128K´8-bit organizatio
(7 views)
K6R1008C1A-C20 (Samsung semiconductor)
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and In
(7 views)
K6R1008C1A-I12 (Samsung semiconductor)
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and In
(7 views)
WMS128K8-xxx (White Electronic Designs)
128Kx8 MONOLITHIC SRAM
www.DataSheet4U.com
White Electronic Designs
FEATURES
n Access Times 70, 85, 100, 120ns n Revolutionary, Center Power/Ground Pinout JEDEC Approved •
(7 views)
KM681002BI (Samsung semiconductor)
128Kx8 Bit High Speed Static RAM
PRELIMINARY
KM681002B, KM681002BI
Document Title
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Ind
(7 views)
AS7C33128NTD18B (Alliance Semiconductor Corporation)
3.3V 128Kx18 Pipelined SRAM
April 2005
®
AS7C33128NTD18B
3.3V 128K×18 Pipelined SRAM with NTDTM
Features • Organization: 131,072 words × 18 bits • NTD™ architecture for efficie
(7 views)
WS128K32-XG2LX (Microsemi)
128Kx32 SRAM
WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devi
(7 views)
S7M403635M (NETSOL)
128Kx36 & 256Kx18 NTSRAM Flow-Through
S7M403635M SS77MM440013863355MM S7M401835M
128Kx36 & 256Kx18 NTSRAM Flow-Through 128Kx36 & 256Kx18 NTSRAM Flow-Through
4Mb NTSRAM Flow-Through Speci
(6 views)
K6F1008V2C (Samsung semiconductor)
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
K6F1008V2C Family
Document Title
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
(6 views)
