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1CY7C1380BV25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 200,166,

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,43

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IS61LV51216 IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI DECEMBER 2005 ® FEATURES • High

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Product Preview GS815018/36AB-357/333/300/250 www.DataSheet4U.com 119-Bump BGA Commercial Temp Industrial Temp Features • Register-Register Late Writ

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ESMT SDRAM M12L16161A (2R) 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION  JEDEC standard 3.3V power supply The M12L16161A

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FP75R12KT4 EconoPIM™3 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPIM™3 module with fast Trench/Fieldstop I

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IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.DataShe

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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MX27C4000 4M-BIT [512K x8] CMOS EPROM FEATURES • • • • • • 512K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time

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Thick Film Chip Resistor 0603 Features •  Small size and light weight •  Suitable for both wave and reflow soldering •  Reduction of assembly costs

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM64PC32T/D Advance Information 256K/512K Pipelined BurstRAM™ Secondary Cache Module

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Type DME Polyester Film Capacitors Metallized Radial Leads DC Applications Miniature Size Type DME radial-leaded, mini-dipped capacitors deliver virtu

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