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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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SMV512K32-SP www.ti.com SLVSA21I – JUNE 2011 – REVISED JANUARY 2014 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • 20-

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FD450R12KE4P 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material 62mm

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Metal Oxide Varistors Varistor>25D180~182KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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Metal Oxide Varistors Varistor>25D180~182KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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FF600R12KT4 62 mm C-Series module Preliminary datasheet 62 mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Features • El

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D

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STM32L412xx Ultra-low-power Arm® Cortex®-M4 32-bit MCU+FPU, 100DMIPS, up to 128KB flash, 40KB SRAM, analog, ext. SMPS Datasheet - production data Fea

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PE8612K N-Channel Enhancement Mode Power MOSFET Description The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate cha

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3

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FP75R12KT4 EconoPIM™3 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPIM™3 module with fast Trench/Fieldstop I

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tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add

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Technische Information / Technical Information IGBT-Module IGBT-modules FP50R12KT4_B11 EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Cont

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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