isc N-Channel MOSFET Transistor ·FEATURES ·Drai.
GOFORD
17
GT015N06TL - N-Channel Enhancement Mode Power MOSFET
GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat.
GOFORD
17
GT015N06 - N-Channel Enhancement Mode Power MOSFET
GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat.
BELLING
15
BLQM15N06L - 60V N-Channel Power MOSFET
Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION The BLQM15N06L uses advanced trench technology to provide excellent RDS(ON), low gat.
ON Semiconductor
7
NTBG015N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS.
ON Semiconductor
7
NVBG015N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L NVBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Ty.
Infineon
5
ISC015N06NM5LF - MOSFET
ISC015N06NM5LF MOSFET OptiMOSTM5LinearFET,60V Features •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistance.
ON Semiconductor
5
NVH4L015N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L NVH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V .
Inchange Semiconductor
4
15N06 - N-Channel Mosfet Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :.
Intersil Corporation
4
RFD15N06LE - N-Channel Power MOSFET
RFD15N06LE, RFD15N06LESM Data Sheet April 1999 File Number 4079.1 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Ch.
Intersil Corporation
4
RFD15N06LESM - N-Channel Power MOSFET
RFD15N06LE, RFD15N06LESM Data Sheet April 1999 File Number 4079.1 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Ch.
Fairchild Semiconductor
4
FDMC15N06 - N-Channel MOSFET
FDMC15N06 N-Channel MOSFET July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090Ω Features • RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A • 100% Ava.
Motorola
4
MTD15N06VL - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06VL/D ™ TMOS V ™ Designer's Data Sheet MTD15N06VL Power Field Effect Transis.
Unisonic Technologies
4
15N06 - 60V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N06 15A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent .
ON Semiconductor
4
MTD15N06V - Power MOSFET
MTD15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and c.
Infineon
4
ISC015N06NM5LF2 - MOSFET
ISC015N06NM5LF2 MOSFET OptiMOSTM5LinearFET2,60V Features •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resista.
Intersil Corporation
3
RFP15N06L - N-Channel Power MOSFET
RFP15N05L, RFP15N06L Data Sheet July 1999 File Number 1558.3 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enh.
Rohm
3
RSQ015N06 - Nch 60V 1.5A Power MOSFET
RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 60V 290mW 1.5A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Pr.
Inchange Semiconductor
3
IPD15N06S2L64 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IPD15N06S2L64 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source .
NXP
2
PHX15N06E - PowerMOS transistor Isolated version of PHP20N06E
Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-.
ROHM
2
RSQ015N06FRA - MOSFET
RSQ015N06FRA Nch 60V 1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 60V 290m: 1.5A 1.25W zFeatures 1) Low on - resistance. 2) Built-in G-S.