15N06 Datasheet | Specifications & PDF Download

N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS IC VCES Vcesat-ty（p Vge=15V） 15 A 600V 1.8V Package   APPLICATIONS  General purpose i

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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ISC015N06NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 60 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resista

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GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat

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UNISONIC TECHNOLOGIES CO., LTD 15N06 15A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent

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RSQ015N06FRA Nch 60V 1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 60V 290m: 1.5A 1.25W zFeatures 1) Low on - resistance. 2) Built-in G-S

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ISC015N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistance

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L NVBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Ty

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GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP15N06V TMOS V Power Field Effect Transistor TMOS V is a new technology d

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IPG15N06S3L-45 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 V 2 x 45 mΩ 15 A Features • Dual N-channel Logic Level - Enha

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Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION The BLQM15N06L uses advanced trench technology to provide excellent RDS(ON), low gat

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Data Sheet 0.2Max. 4V Drive Nch MOSFET RSF015N06  Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small Surface M

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L NVH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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