UNISONIC TECHNOLOGIES CO., LTD 18N40 400V N-CHANNE.
STMicroelectronics
STGB18N40LZ - EAS 180 mJ - 400 V - internally clamped IGBT
STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 1.
Unisonic Technologies
18N40 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 18N40 400V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 18N40 is a 400V N-channel Power MOSFET, providin.
ON Semiconductor
NGB18N40ACLB - Ignition IGBT
NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit.
STMicroelectronics
STGD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
Maple Semiconductor
SLF18N40C - N-Channel MOSFET
SLP18N40C / SLF18N40C SLP18N40C / SLF18N40C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana.
ON Semiconductor
NGB18N40CLBT4 - N-Channel D2PAK
www.DataSheet4U.com NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features.
ON Semiconductor
NGB18N40CLB - Ignition IGBT
NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit.
ON Semiconductor
NGD18N40ACLB - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir.
ON Semiconductor
NGD18N40CLBT4G - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir.
STMicroelectronics
GD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
STMicroelectronics
GP18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
STMicroelectronics
STGB18N40LZT4 - Automotive-grade 390V internally clamped IGBT
STGB18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ TAB 3 1 D2PAK C (2 or TAB) Features • AEC-Q101 qualified • SCIS .
STMicroelectronics
STGD18N40LZT4 - Automotive-grade 390V internally clamped IGBT
STGD18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Features TAB 23 1 DPAK C (2 or TAB) RG G (1) • AEC-Q101 qualifi.
STMicroelectronics
STGP18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
Maple Semiconductor
SLP18N40C - N-Channel MOSFET
SLP18N40C / SLF18N40C SLP18N40C / SLF18N40C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana.
ON Semiconductor
NGD18N40CLB - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir.
ON Semiconductor
NGD18N40ACLBT4G - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir.
STMicroelectronics
GB18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
