ON Semiconductor
NGB18N40ACLB - Ignition IGBT
NGB18N40CLB, NGB18N40ACLB
Ignition IGBT 18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit
(11 views)
STMicroelectronics
GD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(11 views)
ON Semiconductor
NGD18N40CLBT4G - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir
(10 views)
ON Semiconductor
NGD18N40ACLBT4G - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir
(10 views)
Unisonic Technologies
18N40 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 18N40
400V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 18N40 is a 400V N-channel Power MOSFET, providin
(9 views)
ON Semiconductor
NGD18N40ACLB - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir
(9 views)
ON Semiconductor
NGD18N40CLB - Ignition IGBT
NGD18N40CLB, NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir
(8 views)
STMicroelectronics
STGD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(7 views)
STMicroelectronics
STGP18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(7 views)
ON Semiconductor
NGB18N40CLBT4 - N-Channel D2PAK
www.DataSheet4U.com
NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
(7 views)
STMicroelectronics
STGB18N40LZ - EAS 180 mJ - 400 V - internally clamped IGBT
STGB18N40LZ STGD18N40LZ, STGP18N40LZ
EAS 180 mJ - 390 V - internally clamped IGBT
Features
■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 1
(7 views)
ON Semiconductor
NGB18N40CLB - Ignition IGBT
NGB18N40CLB, NGB18N40ACLB
Ignition IGBT 18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit
(6 views)
STMicroelectronics
GP18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(6 views)
STMicroelectronics
GB18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(5 views)
Maple Semiconductor
SLF18N40C - N-Channel MOSFET
SLP18N40C / SLF18N40C
SLP18N40C / SLF18N40C
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced plana
(4 views)
STMicroelectronics
STGB18N40LZT4 - Automotive-grade 390V internally clamped IGBT
STGB18N40LZT4
Datasheet
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
TAB
3 1 D2PAK
C (2 or TAB)
Features
• AEC-Q101 qualified • SCIS
(4 views)
Maple Semiconductor
SLP18N40C - N-Channel MOSFET
SLP18N40C / SLF18N40C
SLP18N40C / SLF18N40C
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced plana
(3 views)
STMicroelectronics
STGD18N40LZT4 - Automotive-grade 390V internally clamped IGBT
STGD18N40LZT4
Datasheet
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Features
TAB 23 1
DPAK
C (2 or TAB)
RG G (1)
• AEC-Q101 qualifi
(3 views)
