GB18N40LZ Datasheet - STMicroelectronics

GB18N40LZ Automotive-grade 390V internally clamped IGBT

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

GB18N40LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pul

GB18N40LZ-STMicroelectronics.pdf