18N60 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult

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SVF18N60F/T 18A、600V N SVF18N60F/T N MOS F-CellTM VDMOS 。 、 。 AC-DC ，DC-DC ， H PWM 。 ∗ 18A，600V，RDS(on)()=0.36Ω@VGS=10V ∗ ∗ ∗ ∗ dv/dt

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy

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SVF18N60F_Datasheet 18A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which

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STF18N60DM2 N-channel 600 V, 0.260 Ω typ., 13 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Intern

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw

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STD18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A MDmesh M6 Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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UNISONIC TECHNOLOGIES CO., LTD 18N60-ML 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60-ML is a high voltage power MOSFET combines advanc

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S

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STF18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) Features Order code

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STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S

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