isc N-Channel MOSFET Transistor INCHANGE Semicond.
STMicroelectronics
STF18N60DM2 - N-CHANNEL POWER MOSFET
STF18N60DM2 N-channel 600 V, 0.260 Ω typ., 13 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Intern.
Silan Microelectronics
SVF18N60F - 600V N-CHANNEL MOSFET
SVF18N60F_Datasheet 18A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which .
Truesemi
TSF18N60MR - N-Channel MOSFET
TSF18N60MR TSF18N60MR 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog.
Inchange Semiconductor
18N60 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy.
IXYS
IXFP18N60X - Power MOSFET
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe.
IXYS Corporation
IXFV18N60P - Power MOSFET
www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N.
IXYS
IXTQ18N60P - Power MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S.
Unisonic Technologies
18N60 - N-Channel Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan.
INCHANGE
STF18N60M2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
INCHANGE
IXFA18N60X - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFA18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt.
INCHANGE
IXTV18N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw.
IXYS
IXFA18N60X - Power MOSFET
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe.
IXYS Corporation
IXFH18N60P - PolarHV HiPerFET Power MOSFET
www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N.
IXYS
IXTV18N60P - Power MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S.
IXYS
IXTV18N60PS - Power MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S.
Greatpower
GPT18N60 - POWER FIELD EFFECT TRANSISTOR
GPT18N60 / GPT18N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High .
Greatpower
GPT18N60D - POWER FIELD EFFECT TRANSISTOR
GPT18N60 / GPT18N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High .
STMicroelectronics
STP18N60DM2 - N-channel Power MOSFET
STP18N60DM2 N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schemati.
STMicroelectronics
STF18N60M6 - N-CHANNEL POWER MOSFET
STF18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) Features Order code .
STMicroelectronics
STD18N60M6 - N-Channel Power MOSFET
STD18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A MDmesh M6 Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS .