1MB Datasheet | Specifications & PDF Download

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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M27C160 16 Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 70ns BYTE-WIDE or WORD-WIDE

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

Rating: 1 ★ (6 votes)

N01L6183A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L6183A is an integrated memory device containing a 1 Mbit Static Ran

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1MBH50-060,1MBH50D-060, 600V / 50A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise

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IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I

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PixArt Imaging Inc. PMW3901MB Product Datasheet Optical Motion Tracking Chip PMW3901MB-TXQT: Optical Motion Tracking Chip Product Datasheet General

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M29F080D 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 5V ±10% for PROGRAM, ERASE

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M29W008T M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W008T and M29W008B are replaced respective

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Features •= •= •= •= •= Saifun NROM™ Flash Cell Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Byte and Page Writ

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M27C801 8 Mbit (1Mb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current

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GS71116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 10, 12, 15ns • CMOS low power operation: 100/85/70 mA at

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto

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http://www.fujielectric.com/products/semiconductor/ 1MBI650VXA-170EL-54 IGBT MODULE (V series) 1700V / 650A / 1 in one package IGBT Modules Feature

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8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450X Series Schematic 6N135 / 6N136 EL4502 / EL4503 Features • High speed 1Mbit

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http://www.fujielectric.com/products/semiconductor/ 1MBI1000VXB-170EH-50 IGBT MODULE (V series) 1700V / 1000A / 1 in one package IGBT Modules Featu

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5V，±40V BUS SIT1040Q Protection，1Mbps High Speed CAN transceiver FEATURES PRODUCT OUTLINE ➢ Fully compatible with the ISO 11898 standard ➢ AEC-Q

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LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F160S3-L 16M(2Mx8/1Mx16) Smart3 Voltage

Rating: 1 ★ (4 votes)