1N5819-G Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C

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AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N5817WS THRU 1N5819WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RA

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1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G

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1N5817W THRU 1N5819W Surface  Mount Schottky Barrier Rectifier Reverse  Voltage - 20 to 40 V Forward Current - 1 A         PINNING PIN 1 2 1 DESCRIP

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE 1N5819-1 1N5819UR-1 JAN JANTX JANTXV

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992

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www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

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1N5817WS~1N5819WS 1 A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Marking Code: 1N5817WS: SK 1N5818

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1N5819-1, 1N5819UR-1 Silicon Schottky Barrier Diode Features • Low Forward Voltage: 490 mV @ IF = 1.0 A • Available in JAN, JANTX, JANTXV and JANS per

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UNISONIC TECHNOLOGIES CO., LTD 1N5819 SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage

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Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficienc

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1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame

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1N5819HW 1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary (@ TA = +25°C) VRRM (V) 40 IO (A) 1.0 VF(MAX) (mV) 450 IR(MAX) (µA) 50 De

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1N5817W - 1N5819W PRV : 20 - 40 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES SOD-123FL 2.9 2.6 1.1 0.8 1.9 1.7 0.2 0.1 MECHANICAL D

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