1N90 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = I =D(limit) RDS(on) ≤ 900V 250mA 80Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS

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Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = I =D(limit) RDS(on) ≤ 900V 250mA 80Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS

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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO

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N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

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ISW11N90A N-Channel MOSFET Applications: • ATX Power • LCD Panel Power Pb Lead Free Package and Finish VDSS 950V RDS(on)(Typ) ID (Max) 0.85Ÿ 11A

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FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g

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FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

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Self Diagnosis Supported model SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. MODEL BG-3S CHASSIS COMMANDER DEST. CHASSIS NO. KV-HF51P50 KV-XF21M

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FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @

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isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is pr

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N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

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FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

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UNISONIC TECHNOLOGIES CO., LTD 11N90 11A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’

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Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 10

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