.
Fairchild Semiconductor
FQAF11N90C - MOSFET
FQAF11N90C — N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.0 A, 1.1 Ω December 2013 Description This N-Channel enhancement mode.
STMicroelectronics
STF21N90K5 - N-CHANNEL MOSFET
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO.
Truesemi
TSA11N90M - N-Channel MOSFET
TSA11N90M TSA11N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology..
Fairchild Semiconductor
FQA11N90C - 900V N-Channel MOSFET
FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g.
JILIN SINO
JCS11N90WT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package LED APPLICA.
Fairchild Semiconductor
FQA11N90 - 900V N-Channel MOSFET
FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,.
Fuji Electric
FMH11N90E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMH11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
Fairchild Semiconductor
FQA11N90C_F109 - MOSFET
FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.
Fairchild Semiconductor
FQA11N90_F109 - N-Channel QFET MOSFET
FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @.
Unisonic Technologies
1N90 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 1N90 1 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N90 is an N-channel mode power MOSFET, using UTC’s.
ON Semiconductor
FQA11N90C-F109 - N-Channel MOSFET
FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.
JILIN SINO
JCS11N90ABT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package LED APPLICA.
Fairchild Semiconductor
FQAF11N90 - 900V N-Channel MOSFET
FQAF11N90 September 2000 QFET FQAF11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors ar.
Electronic Alliance
MZ31-07N681N900 - PTC Thermistor
Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo.
Unisonic Technologies
11N90 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 11N90 11A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’.
Fuji Electric
FMV11N90E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMV11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
Samsung
SSH11N90 - N-Channel Power MOSFET
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet htt.
Sony
KV-XF21N90 - Color TV Manual
Self Diagnosis Supported model SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. MODEL BG-3S CHASSIS COMMANDER DEST. CHASSIS NO. KV-HF51P50 KV-XF21M.
Wisdom technologies
WFW11N90 - N-Channel MOSFET
Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 10.
