20N03 Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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220N03MD-VB 220N03MD-VB Datasheet Dual N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.019 at VGS = 4.5 V 0

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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Description AP420N03SLG5 30V N-Channel Enhancement Mode MOSFET The AP420N03SLG5 uses advanced APM-SGT V technology to provide excellent RDS(ON), low

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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SLM120N03G SLM120N03G 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technol

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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SLD120N03T SLD120N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advan

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Moun

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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