20N03 Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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Transistors 2.5V Drive Nch MOS FET RTQ020N03 RTQ020N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) Space saving, small s

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested

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RSQ020N03FRA Nch 30V 2A Power MOSFET VDSS RDS(on) (Max.) ID PD 30V 134mW 2.0A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection D

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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HN20N03 N-Channel Enhancement Mode Power MOSFET Description The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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N-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient h

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EMB20N03VAA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 1

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