20N03 Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 22mΩ ID 6A G UIS, Rg 100% Tested S

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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EMB20N03VAA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 1

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CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSF

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NP120N03D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 15A G UIS, Rg 100% Tested

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Moun

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GJ20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID

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CYStech Electronics Corp. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : 2017.11.27 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mod

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020

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isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ

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EMB20N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 1

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested

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SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30

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HRLE320N03K Jan 2016 HRLE320N03K 30V N-Channel Trench MOSFET Features ‰ Low Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Techno

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