20N03 Datasheet | Specifications & PDF Download

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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HM120N03KA N-Channel Enhancement Mode Power MOSFET Description The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON)

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HN20N03 N-Channel Enhancement Mode Power MOSFET Description The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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CYStech Electronics Corp. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : 2017.11.27 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mod

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CYStech Electronics Corp. Spec. No. : C737Q8 Issued Date : 2009.04.29 Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mod

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Transistors 2.5V Drive Nch MOS FET RTQ020N03 RTQ020N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) Space saving, small s

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MT120N03F MT120N03F MT120N03F PDFN5*6-8L Shenzhen Meitai Microelectronics Co., Ltd WWW.MTWDZ.CN MT120N03F Shenzhen Meitai Microelectronics Co., L

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Moun

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NP120N03D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to

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DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced v

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NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides t

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MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high ener

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