20P03 Datasheet | Specifications & PDF Download

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power te

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CMP120P03-VB CMP120P03-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.004 at VGS = - 10 V 0.0

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P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME20P03 is the P-Channel logic enhancement mode power field effect transistors are produced using

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A G UIS, Rg 100% Tested

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MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in th

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EMB20P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8.7A G S Pb‐

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EMB20P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A G UIS, Rg

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A G UIS, Rg 100% Tested

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    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐30V  RDSON (MAX.)  24mΩ  ID  ‐8A    UIS, Rg 100%

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SSD20P03-60 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS(ON) 59mΩ RoHS Compliant Product A suffix of “-C” specifies hal

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EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A G Sin

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Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power lo

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ME20P03-VB ME20P03-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8A G S Pb‐Free Lead Plati

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P-Channel 30V (D-S) MOSFET ME20P03F/ME20P03F-G GENERAL DESCRIPTION The ME20P03F is the P-Channel logic enhancement mode power field effect transisto

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BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C ope

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Moun

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Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power lo

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20P03 20P03 Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5 V ID (A

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