20v Datasheet | Specifications & PDF Download

UMW IRLML6302TR -20V P-ChanneI MOSFET 1.Features VDS (V)=-20V RDS(ON)<90mΩ(VGS=-4.5V) RDS(ON)<110mΩ(VGS=-2.7V) Lead-Free P-Channel MOSFET SOT-23 Foo

(133 views)

UMW SI2302A 20V N-ChanneI MOSFET 1.Description The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

(129 views)

UMW IRLML2246TR -20V P-ChanneI MOSFET 1.Description The IRLML2246TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

(127 views)

SJS2300A 20V N-Channel Trench Power MOSFET General Description The SJS2300A uses advanced trench technology to provide excellent RDS(ON), low gate ch

(121 views)

CM3415 P-Channel 20V (D-S) Power MOSFET Description Applications CM3415 is the P-Channel enhancement mode power field  Cellular Handsets and Acces

(118 views)

The Future of Analog IC Technology DESCRIPTION The MP9186 is a synchronous, rectified, stepdown, switch-mode converter with internal power MOSFETs. It

(114 views)

30A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

(114 views)

UMW SI2300A 20V N-ChanneI MOSFET 1.Features V(BR)DSS=20V ID=6A RDS(ON)<25mΩ(VGS=4.5V) RDS(ON)<34mΩ(VGS=2.5V) TrenchFET Power MOSFET 3.Pinning inform

(109 views)

20V, 13A DUAL N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN0213T2 uses advanced trench technology and design to provide excellent RDS(on) with lo

(109 views)

60A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

(108 views)

SPTP12R15H 120V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=10.8mΩ@VGS=10V  Low Gate Charge Minimize Switch

(107 views)

-4.8A, -20V P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for application

(104 views)

LMN2730EX7F Rev. 1.0 20V Dual N-Channel MOSFETs Features ● 20V, 700mA, RDS(ON)=400mΩ@VGS=4.5V ● Fast switching ● Suit for 1.5V Gate Drive Applicatio

(103 views)

80A,20VN-CHANNELMOSFET SFD2008T GENERAL DESCRIPTION The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON

(103 views)

MTE3134K MTE3134K MTE3134K 20V 280 0.9A Shenzhen Meitai Microelectronics Co., Ltd WWW.MTWDZ.CN MTE3134K Shenzhen Meitai Microelectronics Co.,

(101 views)

QM2422M3 N-Channel 20V Fast Switching MOSFET General Description The QM2422M3 is a high performance trench N-channel MOSFET which utilizes extremely

(100 views)

Parameters Subject to Change Without Notice FEATURES 4.6V to 20V operating input range 2A output current Up to 94% efficiency High efficiency (>85%) a

(93 views)

LMP2165X5F Rev. 1.0 LMP2165X5F 20V P-Channel Enhancement MOSFET Features ● -20V/-1.5A, RDS(ON) =70mΩ@VGS = -4.5V ● -20V/-1.2A, RDS(ON) =90mΩ@VGS = -

(92 views)

DATA SHEET www.onsemi.com MOSFET – Power, P-Channel, Dual ECH8 -20 V, -5 A, 38 mW ECH8654 Features • Low ON−resistance • 1.8 V Drive • Halogen Free C

(92 views)

MTC2402Q8-VB MTC2402Q8-VB Datasheet N- and P-Channel 20-V (D-S) MOSFETS www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.006 at VGS = 4.5 V N

(91 views)