UNISONIC TECHNOLOGIES CO., LTD 22N60 022A, 600V N-.
SIHB22N60AE - MOSFET
www.vishay.com SiHB22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n.FCP22N60N - N-Channel MOSFET
FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features .SiHA22N60E - E Series Power MOSFET
www.vishay.com SiHA22N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V).SIHA22N60AE - Power MOSFET
www.vishay.com SiHA22N60AE Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V).FCPF22N60NT - N-Channel MOSFET
FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features .IRFP22N60KPBF - HEXFET Power MOSFET
IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High .IRFP22N60K - SMPS MOSFET
PD - 94414A SMPS MOSFET IRFP22N60K HEXFET® Power MOSFET Applications VDSS RDS(on) typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch M.FCA22N60N - N-Channel MOSFET
FCA22N60N — N-Channel SupreMOS® MOSFET FCA22N60N N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ May 2014 Features • BVDSS > 650 V @ TJ = 150oC • RD.IXTV22N60PS - PolarHV Power MOSFET
www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(o.IXFQ22N60P3 - Polar3 HiperFET Power MOSFETs
Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ.IXFQ22N60P3 - Power MOSFET
Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ.SIHG22N60E - Power MOSFET
www.vishay.com SiHG22N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC.SIHG47N60S-E3 - (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET
V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:.ICE22N60 - N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet ICE22N60 ICE22N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.SiHB22N60E - E Series Power MOSFET
www.vishay.com SiHB22N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max..SiHB22N60S - S Series Power MOSFET
www.vishay.com SiHB22N60S Vishay Siliconix S Series Power MOSFET PRODUCT SUMMARY VDS at TJ max. (V) RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.IRFP22N60K - Power MOSFET
IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = .ICE22N60 - N-Channel MOSFET
ICE22N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.ICE22N60W - N-Channel MOSFET
ICE22N60W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin.SiHA22N60EF - Power MOSFET
www.vishay.com SiHA22N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET P.