22N60 Datasheet | Specifications & PDF Download

V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:

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UNISONIC TECHNOLOGIES CO., LTD 22N60 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology

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www.vishay.com SiHB22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n

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www.vishay.com SiHA22N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

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www.vishay.com SiHP22N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·Fast Sw

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SAMWIN SW22N60U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.35Ω)@VGS=10V ■ Gate Charge (Typ 124 nC) ■ Improved dv/dt Capabil

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FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features

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FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features

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PD - 94414A SMPS MOSFET IRFP22N60K HEXFET® Power MOSFET Applications VDSS RDS(on) typ. l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch M

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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ICE22N60W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin

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www.vishay.com SiHA22N60AE Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

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IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High

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FCA22N60N — N-Channel SupreMOS® MOSFET FCA22N60N N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ May 2014 Features • BVDSS > 650 V @ TJ = 150oC • RD

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Preliminary Data Sheet ICE22N60 ICE22N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H

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IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS =

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