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IXFT22N60P Datasheet - IXYS

IXFT22N60P PolarHV HiPerFET Power MOSFETs

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22N60P IXFT 22N60P VDSS ID25 = = RDS(on) ≤ ≤ trr 600 V 22 A 330 mΩ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs.

IXFT22N60P Features

* z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS

IXFT22N60P Datasheet (131.33 KB)

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Datasheet Details

Part number:

IXFT22N60P

Manufacturer:

IXYS

File Size:

131.33 KB

Description:

Polarhv hiperfet power mosfets.

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IXFT22N60P PolarHV HiPerFET Power MOSFETs IXYS

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