IXFT20N80Q Datasheet - IXYS Corporation

IXFT20N80Q Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, .

IXFT20N80Q Features

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W

* IXYS advanced low Qg process

* International standard packages

* Epoxy meet UL 94 V-0, flammability classificat

IXFT20N80Q Datasheet (72.52 KB)

IXFT20N80Q Datasheet Preview — Preview of IXFT20N80Q PDF

Datasheet Details

Part number:

IXFT20N80Q

Manufacturer:

IXYS Corporation

File Size:

72.52 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFT20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFT20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFT20N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)

IXFT21N50F HiPerRF Power MOSFETs (IXYS Corporation)

IXFT21N50Q Power MOSFET (IXYS)

IXFT22N60P PolarHV HiPerFET Power MOSFETs (IXYS)

IXFT23N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)

IXFT23N80Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)

TAGS

IXFT20N80Q Power MOSFET IXYS Corporation

IXFT20N80Q Distributor