* z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.35 V
IXFT20N60Q Datasheet (163.86 KB)
IXFT20N60Q
IXYS Corporation
163.86 KB
Hiperfet power mosfets q-class.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VD.
📁 Related Datasheet
IXFT20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFT20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFT20N80Q Power MOSFET (IXYS Corporation)
IXFT21N50F HiPerRF Power MOSFETs (IXYS Corporation)
IXFT21N50Q Power MOSFET (IXYS)
IXFT22N60P PolarHV HiPerFET Power MOSFETs (IXYS)
IXFT23N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFT23N80Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFT24N50 Power MOSFET (IXYS Corporation)
IXFT24N50Q Power MOSFET (IXYS Corporation)
