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IXFT21N50Q, IXFH21N50Q Datasheet - IXYS

IXFT21N50Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 500 V = 21 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤.

IXFH21N50Q-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXFT21N50Q, IXFH21N50Q. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFT21N50Q, IXFH21N50Q

Manufacturer:

IXYS

File Size:

557.82 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFT21N50Q, IXFH21N50Q.
Please refer to the document for exact specifications by model.

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IXFT21N50Q IXFH21N50Q Power MOSFET IXYS

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