IXFT21N50F, IXFH21N50F Datasheet - IXYS Corporation

IXFT21N50F HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 21N50F VDSS IXFT 21N50F ID25 RDS(on) = 500 V = 21A = 250mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continu.

IXFT21N50F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC

IXFH21N50F_IXYSCorporation.pdf

IXFT21N50F Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT21N50F, IXFH21N50F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT21N50F, IXFH21N50F

Manufacturer:

IXYS Corporation

File Size:

128.42 KB

Description:

Hiperrf power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFT21N50F, IXFH21N50F.
Please refer to the document for exact specifications by model.

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IXFT21N50F IXFH21N50F HiPerRF Power MOSFETs IXYS Corporation

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