IXFT26N55Q, IXFH26N55Q Datasheet - IXYS

IXFT26N55Q Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.23 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di.

IXFT26N55Q Features

* z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z

IXFH26N55Q-IXYS.pdf

IXFT26N55Q Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT26N55Q, IXFH26N55Q. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT26N55Q, IXFH26N55Q

Manufacturer:

IXYS

File Size:

120.71 KB

Description:

Power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFT26N55Q, IXFH26N55Q.
Please refer to the document for exact specifications by model.

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IXFT26N55Q IXFH26N55Q Power MOSFETs IXYS

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