Datasheet4U Logo Datasheet4U.com

IXFT26N60P Datasheet - IXYS Corporation

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

IXFT26N60P Features

* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤

IXFT26N60P Datasheet (269.78 KB)

Preview of IXFT26N60P PDF

Datasheet Details

Part number:

IXFT26N60P

Manufacturer:

IXYS Corporation

File Size:

269.78 KB

Description:

N-channel enhancement mode fast recovery diode avalanche rated.
Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode A.

📁 Related Datasheet

IXFT26N60 Power MOSFETs (IXYS)

IXFT26N60Q Power MOSFETs (IXYS)

IXFT26N100XHV Power MOSFET (IXYS)

IXFT26N50 Power MOSFET (IXYS Corporation)

IXFT26N50Q Power MOSFET (IXYS Corporation)

IXFT26N55Q Power MOSFETs (IXYS)

IXFT20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFT20N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)

IXFT20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFT20N80Q Power MOSFET (IXYS Corporation)

TAGS

IXFT26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

Image Gallery

IXFT26N60P Datasheet Preview Page 2 IXFT26N60P Datasheet Preview Page 3

IXFT26N60P Distributor