* l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ
IXFT26N50Q Datasheet (134.05 KB)
IXFT26N50Q
IXYS Corporation
134.05 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on).
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