* l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier Advantages l Easy to mount l Space savings l High power dens
IXFT26N60Q Datasheet (106.02 KB)
IXFT26N60Q
IXYS
106.02 KB
Power mosfets.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V =.
📁 Related Datasheet
IXFT26N60 Power MOSFETs (IXYS)
IXFT26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated (IXYS Corporation)
IXFT26N100XHV Power MOSFET (IXYS)
IXFT26N50 Power MOSFET (IXYS Corporation)
IXFT26N50Q Power MOSFET (IXYS Corporation)
IXFT26N55Q Power MOSFETs (IXYS)
IXFT20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFT20N60Q HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFT20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFT20N80Q Power MOSFET (IXYS Corporation)
